| Electronic Components Datasheet Search |
|
GP400DDM12 Datasheet(PDF) 6 Page - Dynex Semiconductor |
|
|
|||||||||||||||||||||||||||||
GP400DDM12 Datasheet(HTML) 6 Page - Dynex Semiconductor |
|
6 / 9 page ![]() GP400DDM12 69 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area Fig.9 Forward bias safe operating area Fig.10 Transient thermal impedance 0 100 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage, VF - (V) Tj = 125˚C Tj = 25˚C 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) Tcase = 125˚C Vge = ±15V Rg = 4.7Ω * *Recommended minimum value 1 10 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) tp = 50µs tp = 100µs IC max. (single pulse) tp = 1ms 0.1 1 10 100 1 10 1000 100 10000 Pulse width, tp - (ms) Diode Transistor |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |