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GP500LSS06S Datasheet(PDF) 3 Page - Dynex Semiconductor |
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GP500LSS06S Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 10 page ![]() GP500LSS06S Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com C ies Input capacitance Module inductance V CE = 25V, VGE = 0V, f = 1MHz nH - - 15 54000 - - - pF L M I F Diode forward current I FM Diode maximum forward current DC t p = 1ms A 500 1000 - - - - V F Diode forward voltage I F = 500A, 1.9 1.1 - A V I F = 500A, Tj = 125˚C 1.8 1.05 - V ELECTRICAL CHARACTERISTICS T j = 25˚C unless stated otherwise. Symbol Collector cut-off current I GES Gate leakage current Conditions V GE = 0V, VCE = VCES V GE = ±20V, VCE = 0V mA 25 2 Max. - Typ. - - Min. - Parameter V 7.5 2.8 2.2 - Gate threshold voltage V GE = 15V, IC = 500A - 4 I C = 20mA, VGE = VCE Units I CES µA V GE(TH) V 2.9 2.3 - V GE = 15V, IC = 500A, Tj = 125˚C V V CE(SAT) Collector-emitter saturation voltage V GE = 0V, VCE = VCES, Tj = 125˚C mA 100 - - |
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