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GP500LSS06S Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # GP500LSS06S
Description  Single Switch IGBT Module
PDF  10 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP500LSS06S Datasheet(HTML) 3 Page - Dynex Semiconductor

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GP500LSS06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
C
ies
Input capacitance
Module inductance
V
CE = 25V, VGE = 0V, f = 1MHz
nH
-
-
15
54000
-
-
-
pF
L
M
I
F
Diode forward current
I
FM
Diode maximum forward current
DC
t
p = 1ms
A
500
1000
-
-
-
-
V
F
Diode forward voltage
I
F = 500A,
1.9
1.1
-
A
V
I
F = 500A, Tj = 125˚C
1.8
1.05
-
V
ELECTRICAL CHARACTERISTICS
T
j = 25˚C unless stated otherwise.
Symbol
Collector cut-off current
I
GES
Gate leakage current
Conditions
V
GE = 0V, VCE = VCES
V
GE = ±20V, VCE = 0V
mA
25
2
Max.
-
Typ.
-
-
Min.
-
Parameter
V
7.5
2.8
2.2
-
Gate threshold voltage
V
GE = 15V, IC = 500A
-
4
I
C = 20mA, VGE = VCE
Units
I
CES
µA
V
GE(TH)
V
2.9
2.3
-
V
GE = 15V, IC = 500A, Tj = 125˚C
V
V
CE(SAT)
Collector-emitter saturation voltage
V
GE = 0V, VCE = VCES, Tj = 125˚C
mA
100
-
-



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