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GP500LSS06S Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # GP500LSS06S
Description  Single Switch IGBT Module
PDF  10 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP500LSS06S Datasheet(HTML) 4 Page - Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
INDUCTIVE SWITCHING CHARACTERISTICS
T
j = 25˚C unless stated otherwise
Symbol
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
Conditions
µs
ns
mJ
-
-
-
45
220
-
-
-
Parameter
Min.
Typ.
Max.
Units
1150
t
f
t
d(on)
Turn-on delay time
ns
-
-
490
Rise time
E
ON
Turn-on energy loss
ns
mJ
-
-
30
225
-
-
t
r
I
C = 500A
V
GE = ±15V
V
CE = 50% VCES
R
G(ON) = RG(OFF) = 5Ω
L ~ 100nH
T
j =
125˚C unless stated otherwise.
t
rr
Diode reverse recovery time
ns
-
225
-
Q
rr
Diode reverse recovery charge
µC
-
20
-
I
F = 500A
V
R = 50%VCES, dIF/dt = 1500A/µs
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
µs
ns
mJ
-
-
-
65
400
-
-
-
1400
t
f
t
d(on)
Turn-on delay time
ns
-
-
550
Rise time
E
ON
Turn-on energy loss
ns
mJ
-
-
50
320
-
-
t
r
I
C = 500A
V
GE = ±15V
V
CE = 50% VCES
R
G(ON) = RG(OFF) = 5Ω
L ~ 100nH
t
rr
Diode reverse recovery time
ns
-
310
-
Q
rr
Diode reverse recovery charge
µC
-
28
-
I
F = 500A
V
R = 50%VCES, dIF/dt = 1500A/µs



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