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GP800FSS12 Datasheet(PDF) 8 Page - Dynex Semiconductor |
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GP800FSS12 Datasheet(HTML) 8 Page - Dynex Semiconductor |
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8 / 11 page ![]() GP800FSS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/11 Fig.13 Diode typical forward characteristics Fig.14 Reverse bias safe operating area Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage, VF - (V) Tj = 125˚C Tj = 25˚C 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) Tcase = 125˚C Vge = ±15V Rg = 3.3Ω* *Recommended minimum value 1 10 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) IC max. (single pulse) t p = 1ms 0.1 1 10 100 1 10 1000 100 10000 Pulse width, tp - (ms) Diode Transistor |
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