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GP800FSS12 Datasheet(PDF) 10 Page - Dynex Semiconductor |
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GP800FSS12 Datasheet(HTML) 10 Page - Dynex Semiconductor |
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10 / 11 page ![]() GP800FSS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/11 Package Details For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 140 4x M8 5 6x M4 11 35 14.5 20 6x Ø7 15 15 1 3 2 4 9 8 7 6 5 11 10 12 62 62 Nominal weight: 1600g Module outline type code: F ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with concept gate drivers AN5190 |
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