©

1998

PRELIMINARY DATA SHEET

FEATURE

•

Ideal for medium-output applications

•

High gain, low noise

•

Small reverse transfer capacitance

•

Can operate at low voltage

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

100

mA

Total Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

SILICON TRANSISTOR

2SC5455

NPN EPITAXIAL SILICON TRANSISTOR

4-PIN MINI MOLD

Document No. P13081EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

PACKAGE DIMENSIONS (in mm)

5°

5°

5°

5°

2.8

+0.2

–0.3

1.5

+0.2

–0.1

PIN CONNECTIONS

1: Collector

2: Emitter

3: Base

4: Emitter

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

0.1

µA

Emitter Cut-off Current

0.1

µA

DC Current Gain

75

150

Gain Bandwidth Product

12.0

GHz

Reverse Transfer Capacitance

0.5

0.7

pF

Insertion Power Gain

8.0

10.0

dB

Noise Figure

NF

1.5

2.5

dB

≤ 350

µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.