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ACT5880 Datasheet(PDF) 50 Page - Active-Semi, Inc

Part # ACT5880
Description  15 Channels Advanced PMU for Smart Phone
PDF  87 Pages
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Manufacturer  ACTIVE-SEMI [Active-Semi, Inc]
Direct Link  http://www.active-semi.com
Logo ACTIVE-SEMI - Active-Semi, Inc

ACT5880 Datasheet(HTML) 50 Page - Active-Semi, Inc

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ACT5880
Rev 2, 03-Sep-13
- 50 -
www.active-semi.com
ActivePMU
TM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Copyright © 2013 Active-Semi, Inc.
Active-Semi Confidential―Do Not Copy or Distribute
SINGLE-CELL LI+ CHARGER ELECTRICAL CHARACTERISTICS
(VCHGIN = 5V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CHARGE INPUT
Input Voltage Range
Nominal condition VCHGIN
0
7
V
Valid for Charging Input Voltage
Range
VCHGIN
4.2
6.0
CHGIN OVP Threshold
VCHGIN rising, OVPSET[1:0] = 00
6.3
CHGIN OVP Threshold Adjustment
Step
LSB weight for threshold adjustment, OVP-
SET[1:0] from 00 to 11 stepping up.
200
mV
CHGIN OVP Threshold Hysteresis
VCHGIN falling
200
CHGIN UVLO Threshold
VCHGIN rising
3.8
4.0
4.2
V
CHGIN UVLO Hysteresis
VCHGIN falling
500
mV
Logic Low Input Level
For ACIN and CHGLEV.
0.4
V
Logic High Input Level
1.4
CHGIN Supply Current
VCHGIN < VUVLO
50
100
µA
Suspended, SUSCHG[ ]=1.
200
300
End of charge sleep, CHG_DAT reads 1.
800
1200
CHARGE REGULATION
Battery Regulation Voltage
For top-off, float-
ing or LDO mode
operation; No load
at VBAT.
VSET[3:0]=0101
4.179
4.2
4.221
V
Battery Regulation Voltage Adjust-
ment Resolution
Weight of the LSB,
VSET[3:0]=0000 to 1111
19.5
20
20.5
mV
Line Regulation
VCHGIN =4.5V to 5.5V, IBAT=10mA
0.1
%/
V
Load Regulation
IBAT=100mA to 1000mA
0.001
0.001
0.001
%/
mA
Fast Charge Current
CHGLEV=0 and ACIN=0, or ISET[3:0]=0000
75
90
105
mA
CHGLEV=1 and ACIN=0, or ISET[3:0]=0100
0.4
0.45
0.5
A
ACIN=1, ISET[3:0]=1111
0.9
1
1.1
Fast Charge Current Adjustment
Resolution
Change per adjacent code stepping for ISET
[3:0] =0001 to 1111, from 0.3A to 1A.
50
mA
ISET[3:0]=0001 to 1111
8
10
12
%
ISET[3:0]=0000
45
mA
Precondition Threshold
VVBAT rising.
2.75
2.85
3
V
Precondition Threshold Hysteresis
VVBAT falling.
150
mV
End of Charge Residual Ratio
Ratio to the fast charge current
8
10
12
%
Precondition Charge Current, ratio
to fast charge current.
Charge Restart Drop
Drop of the battery regulation voltage, falling.
180
220
264
mV
Thermal Regulation Action
RangeNOTE
Thermal regulation starts to current cut tem-
perature range, at the sensor junction.
90
140
˚C



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