STB34N65M5 datasheet(4/22 Pages) STMICROELECTRONICS

4 / 22 page

Electrical characteristics

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

4/22

DocID022853 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 14 A

0.09

0.11

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

2700

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-6.3

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 520 V, VGS = 0

-220

Co(er)

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-63

Intrinsic gate

resistance

f = 1 MHz open drain

1.95

Total gate charge

VDD = 520 V, ID = 14 A,

VGS = 10 V

(see Figure 18)

62.5

Qgs

Gate-source charge

Qgd

Gate-drain charge

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