STB34N65M5 datasheet(5/22 Pages) STMICROELECTRONICS

Part #	STB34N65M5

Description	N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

PDF	22 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 22 page

DocID022853 Rev 3

5/22

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td (v)

Voltage delay time

VDD = 400 V, ID = 18 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19 and

Figure 22)

-59

tr (v)

Voltage rise time

8.7

tf (i)

Current fall time

7.5

tc(off)

Crossing time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

112

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 28 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 28 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 22)

350

Qrr

Reverse recovery charge

5.6

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 28 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 22)

422

Qrr

Reverse recovery charge

7.4

µC

IRRM

Reverse recovery current

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