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RT230PD Datasheet(PDF) 2 Page - RFHIC |
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RT230PD Datasheet(HTML) 2 Page - RFHIC |
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2 / 32 page  Power Transistor RT230PD Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 32 Version 5.2 Environmental Characteristics PARAMETER UNIT MIN TYP MAX SYMBOL Saturated Drain Current mA - 1100 - Idss Transconductance mS - 790 - gm Pinch-off Voltage V -1 -1.8 -3 Vp Breakdown Voltage Gate-Source V -18 - -25 Bvgs Breakdown Voltage Gate-Drain V -18 - -25 Bvgd Output Power @ 1dB G.C.P dBm 34 34.5 - P1dB Power Gain @ 1dB G.C.P dB - 14.5 - G1dB Power added efficiency % - 50 - ηadd Thermal Resistance ℃ /W - 18 20 Rth * Test Conditions : Vd=9V, Id=450mA, Ta=+25℃, Frequency=2.3GHz |
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