STL52N25M5 datasheet(3/13 Pages) STMICROELECTRONICS

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STL52N25M5

Electrical ratings

Doc ID 17819 Rev 2

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

(1)

This value is rated according Rthj-case.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

112

(3)

This value is rated according Rthj-a.

Drain current (continuous) at TC = 25 °C

4.2

(3)

Drain current (continuous) at TC = 100 °C

2.6

IDM

(2),(3)

Drain current (pulsed)

16.8

PTOT

(1)

Total dissipation at TC = 25 °C

110

PTOT

(3)

Total dissipation at TC = 25 °C

2.5

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

230

dv/dt(4)

ISD ≤ 28 A, di/dt ≤ 400 A/µs, VDD = 150 V, VPeak < V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.14

°C/W

Rthj-a

(1)

When mounted on FR-4 board of 1inch², 2oz Cu

Thermal resistance junction-amb max

°C/W

Maximum lead temperature for soldering purpose

300

°C/W

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