STB21NK50Z datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STB21NK50Z

Description	N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Electrical characteristics

STB21NK50Z

4/13

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

500

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100 µA

33.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 8.5 A

0.23

0.27

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz, VGS=0

2600

328

Coss eq

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 400 V

187

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400 V, ID = 17 A

VGS =10 V

(see Figure 15)

15.5

119

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