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STP413D Datasheet(PDF) 3 Page - Stanson Technology |
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STP413D Datasheet(HTML) 3 Page - Stanson Technology |
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3 / 10 page ![]() STP413D P Channel Enhancement Mode MOSFET - 12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Uni t Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -40 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0 -2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-40V,VGS=0V -1 uA VDS=-40V,VGS=0V TJ=55℃ -5 On-State Drain Current ID(on) VDS≧-10V,VDS=-5V -30 A Drain-source On- Resistance RDS(on) VGS=-10V,ID=-12A VGS=-4.5V,ID=-8A 36 52 mΩ Forward Transconductance gfs VDS=-5V,ID=-12A 23 S Diode Forward Voltage VSD IS=-1.0A,VGS=0V -1.0 V Dynamic Total Gate Charge Qg VDS=-10V,VDS=-20V ID=-12A 16.5 nC Gate-Source Charge Qgs 3.8 Gate-Drain Charge Qgd 3.5 Input Capacitance Ciss VDS =-20V,VGS=0V F=1MHz 900 pF Output Capacitance Coss 69 Reverse TransferCapacitance Crss 115 Turn-On Time td(on) tr VGS=-10V,VDS=-20V RL=1.6Ω,RGEN=3Ω 6.9 nS 9 Turn-Off Time td(off) tf 44.8 41.2 |
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