CF2N60S

http://ctc-semicon.com

P2/5

■ DYNAMIC CHARACTERISTICS（Tc=25℃)

CHARACTERISTICS SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Input Capacitance

Ciss

VDS=25V,VGS=0V,

f=1.0MHZ

-

295

330

pF

output Capacitance

Coss

-

45

55

pF

Reverse Transfer

Capacitance

Crss

-

4.5

7

pF

■ SWITCHING CHARACTERISTICS（Tc=25℃)

CHARACTERISTICS SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Turn-On Delay Time

td(on)

VDD=300V,ID=2.0A,

RG=25Ω

-

10

28

ns

Turn-On Rise Time

tr

-

25

55

ns

Turn-Off Delay Time

td(off)

-

24

50

ns

Turn-Off Rise Time

tf

-

25

60

ns

Total Gate Charge

Qg

VDS=480V，ID=2.0A,

VGS=10V

-

6.8

12

nC

Gate-Source Charge

Qgs

-

2

-

nC

Gate-Drain Charge

Qgd

-

1.8

-

nC

■ DRAIN-SOURCE DIODE MAXIMUM RATINGS AND CHARACTERISTICS（Tc=25℃)

CHARACTERISTICS SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Max. Diode Forward

Cuurent

Is

-

-

2

A

Max. Pulsed Forward

Cuurent

ISM

-

-

8

A

Diode Forward Voltage

VSD

VGS=0V,IS=2.0A

-

-

1.4

V

Reverse Recovery Time

trr

VGS=0V,IS=2.0A,

dIF/dt=100A/μs

-

380

-

ns

Reverse Recovery Charge

Qrr

-

0.9

-

μ

C

V1.1 2014-01