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CF2N60S Datasheet(PDF) 1 Page - Compact Technology Corp. |
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CF2N60S Datasheet(HTML) 1 Page - Compact Technology Corp. |
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1 / 5 page ![]() CF2N60S http://ctc-semicon.com P1/5 ■ MAXIMUM RATINGS(Tc=25℃) PARAMETER SYMBOL VALUE UNIT Drain-source Voltage VDS 600 V gate-source Voltage VGS ±30 V Continuous Drain Current(TC=25℃) ID 2 A Drain Current-Pulsed IDM 8 A Total Dissipation PD 20 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-150 ℃ Single Pulse Avalanche Energy EAS 120 mJ ■ ELECTRONIC CHARACTERISTICS(Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT Drain-source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V Gate Threshold Voltage VGS(TH) VGS=VDS ,ID=250μA 2 4 V Drain-source Leakage Current IDSS VDS=600V,VGS=0V 25 uA Drain-Source Diode Forward Voltage VSD VGS=0V,IS=2A 1.4 V Gate-body Leakage Current (VDS = 0) IGSS VGS=±30V ±100 nA Forward Transconductance gfs Vds=10V Id=1.0A 0.5 S Static Drain-source On Resistance RDS(ON) VGS=10V,ID=1.0A 5 Ω Thermal Resistance Junction-case RthJ-c 5.5 ℃ /W DESCRIPTION • Electronic Ballast • Electronic Transformer • Switch Mode Power Supply FEATURES • Low Thermal Resistance • High Iput Resistance • Fast Switching • ROHS Compliant TO-220F 1-GATE 栅极 2-DRAIN 漏极 3-SOURCE 源极 V1.1 2014-01 |
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