L99H01QF datasheet(15/53 Pages) STMICROELECTRONICS

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DocID15567 Rev 6

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L99H01

Electrical specifications

Table 12. Inputs: CSN, CLK, PWM, DIR, EN and DI

Item

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

12.1

Vin L

Low-level input voltage

0.3 * VCC

0.4 * VCC

12.2

Vin H

High-level input voltage

0.6 * VCC

0.7 * VCC

12.3

Vin Hyst

Input voltage hysteresis

0.1 * VCC

12.4

ICSN in

Pull-up current at input CSN

VCSN =VCC -1.5 V

-50

-25

-10

µA

12.5

ICLK in

Pull-down current at input

CLK

VCLK = 1.5 V

103550

µA

12.6

IDI in

Pull-down current at input DI

VDI = 1.5 V

103550

µA

12.7

IDIR in

Pull-down current at input DIR VDIR = 1.5 V

103550

µA

12.8

IPWM in

Pull-down current at input

PWM

VPWM = 1.5 V

103550

µA

12.9

REN in

Pull-down resistance at input

VEN = VCC

100

210

480

12.10

Cin

(1)

Input capacitance at input

CSN, CLK, DI, DIR and PWM

0V < VCC <5.3 V

Value of input capacity is not measured in production test. Parameter guaranteed by design.

Table 13. Charge pump output

Item

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

13.1.1

VCP

Charge pump output

voltage

VS = 6 V; ICP = 15 mA

VS +6

VS +7

VS +7.5

13.1.2

VS = 10 V; ICP = 15 mA

VS +11 VS +12

VS +13.5

13.1.3

VS > 12 V; ICP = 15 mA

VS +11

VS +12 VS +13.5

13.2

ICP

Charge pump output

current

fCP = fSYS_CLK / 32;

VS =14V; VCP =VS +10V

13.3

VCP_LOW

Charge pump low

threshold voltage

VS +4.5

VS +5

VS +5.5

13.4.1

fSYS_CLK

Clock frequency

(internal oscillator)

VCC = 5 V

4.5

MHz

13.4.2

VCC = 3 V

2.4

3.3

3.5

MHz

13.5

TCP

Charge pump low filter

time

µs

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