BFG520W_2015 datasheet(3/16 Pages) JMNIC

3 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG520W; BFG520W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCES

collector-emitter voltage

RBE =0

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 85 °C; see Fig.2; note 1

−

500

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

Ts ≤ 85 °C; note 1

180

K/W

Fig.2 Power derating curve.

handbook, halfpage

100

200

400

MBG248

150

( C)

Ptot

(mW)

600

200

BFG520W_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

BFG520W_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL