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BFG520W_2015 Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG520W_2015 Datasheet(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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6 / 16 page ![]() 1998 Oct 02 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X f = 900 MHz; VCE =6V. Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 0 30 20 10 0 10 20 40 MLB810 30 gain (dB) I (mA) C G MSG UM G max f = 2 GHz; VCE =6V. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 0 30 20 10 0 10 20 40 MLB811 30 gain (dB) I (mA) C MSG UM G max G IC = 5 mA; VCE =6V. Fig.8 Gain as a function of frequency; typical values. handbook, halfpage 50 0 10 MLB812 10 2 10 3 10 4 10 20 30 40 (dB) f (MHz) gain G max GUM MSG Fig.9 Gain as a function of frequency; typical values. IC = 20 mA; VCE =6V. handbook, halfpage 50 0 10 MLB813 10 2 10 3 10 4 10 20 30 40 (dB) f (MHz) gain G max GUM MSG |
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