IXKC23N60C5 datasheet(4/4 Pages) IXYS

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20100303c

IXKC 23N60C5

IXYS reserves the right to change limits, test conditions and dimensions.

540

580

620

660

700

-60

-20

100

140

180

T j [°C]

250

500

750

1000

100

140

180

T j [°C]

Ciss

Coss

Crss

10 5

10 4

10 3

10 2

10 1

10 0

100

150

200

V DS [V]

1 20 V

40 0V

Q gate [nC]

25 °C

150 °C

25 °C, 98%

150 °C, 98%

10 2

10 1

10 0

10 -1

0.5

1.5

V SD [V]

25 °C

150 °C

120

160

V GS [V]

typ

98 %

0.05

0.1

0.15

0.2

0.25

0.3

-60

-20

100

140

180

T j [°C]

5 V

5.5 V

6 V

6.5 V

7 V

20 V

0.1

0.2

0.3

0.4

0.5

I D [A]

VDS =

TJV = 150°C

ID = 18 A

VGS = 10 V

VDS > 2·RDS(on) max · ID

TJ =

VDS = 120 V

VGS = 0 V

f = 1 MHz

ID = 11 A

ID = 0.25 mA

ID = 18 A pulsed

Fig. 5 Drain-source on-state resistance

Fig. 4 Typ. drain-source on-state

resistance characteristics

Fig. 7 Forward characteristic

of reverse diode

Fig. 8 Typ. gate charge

Fig. 10 Avalanche energy

Fig. 11 Drain-source breakdown voltage

Fig. 6 Typ. transfer characteristics

Fig. 9 Typ. capacitances

100

1000

10000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

p [ms]

Fig. 12 Typ. transient thermal

impedance with heat transfer paste

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