MSF2N60 datasheet(2/8 Pages) BWTECH

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MSF2N60

600V N-Channel MOSFET

Publication Order Number: [MSF2N60]

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Total Power Dissipation (TC = 25 °C)

Derating Factor above 25 °C

0.18

W/°C

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

°C

• Drain current limited by maximum junction temperature

Thermal characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Max.

Units

Rthjc

Junction-to-Case

5.5

°C/W

RθJA

Junction-to-Ambient

62.5

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS,ID = 250μA

2.0

4.0

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V,ID = 3.5 A

4.0

4.7

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0 V , ID=250μA

600

△BV

DSS

△T

Breakdown Voltage

Temperature Coefficient

ID = 250μA, Referenced to 25°C

0.6

V/°C

IDSS

Zero Gate Voltage Drain

Current

VDS = 600 V , VGS = 0 V

VDS = 480 V , TC = 125°C

100

μA

IGSSF

Gate-Body Leakage

Current, Forward

VGS = 30 V , VDS = 0 V

100

IGSSR

Gate-Body Leakage

Current, Reverse

VGS = -30 V , VDS = 0 V

-100

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 25 V, VGS = 0 V,

f= 1.0MHz

320

420

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

4.5

6.0

Total Gate Charge

VDS = 480 V,ID = 2 A,

VGS = 10 V

9.5

Qgs

Gate-Source Charge

1.6

Qgd

Gate-Drain Charge

4.0

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