MSF2N60 datasheet(3/8 Pages) BWTECH

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MSF2N60

600V N-Channel MOSFET

Publication Order Number: [MSF2N60]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Time

VDS = 300 V, ID = 2 A,

RG = 25 Ω

Turn-On Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Source-Drain Diode Maximum Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source-Drain Diode Forward Current

2.0

ISM

ISM Pulsed Source-Drain Diode Forward Current

6.0

VSD

Source-Drain Diode Forward Voltage

IS = 2 A , VGS = 0 V

1.4

trr

Reverse Recovery Time

IS = 2 A , VGS = 0 V

diF/dt=100A/μs

230

Qrr

Reverse Recovery Charge

1.0

μC

Notes;

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25℃

3. ISD≦2A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width

≦ 300μs, Duty Cycle≦ 2%

5. Essentially Independent of Operating Temperature

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