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RB751S-40 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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RB751S-40 Datasheet(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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1 / 2 page ![]() Page:P2-P1 Plastic-Encapsulate Diodes HIGH SPEED SWITCHING DIODE FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability MARKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 30 mA Peak forward surge current IFSM 200 Junction temperature Tj 125 Storage temperature Tstg -40-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.37 V IF=1mA Reverse current IR 0.5 μA VR=30V VRM 40 V mA Peak reverse voltage Capacitance between terminals cT 2 pf VR=1V,f=1MHZ SOD-523 - + RB751S-40 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ |
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