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28F008SA Datasheet(PDF) 27 Page - Intel Corporation |
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28F008SA Datasheet(HTML) 27 Page - Intel Corporation |
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27 / 33 page  28F008SA BLOCK ERASE AND BYTE WRITE PERFORMANCE Parameter Notes 28F008SA-85 28F008SA-120 Unit Min Typ(1) Max Min Typ(1) Max Block Erase Time 2 16 10 16 10 sec Block Write Time 2 06 21 06 21 sec Byte Write Time 8 (Note 3) 8 (Note 3) m s NOTES 1 25 C 120 VPP 2 Excludes System-Level Overhead 3 Contact your Intel representative for information on the maximum byte write specification EXTENDED TEMPERATURE OPERATION AC CHARACTERISTICSWrite Operations(1) Versions VCCg10% 28F008SA-100(8) Unit Symbol Parameter Notes Min Max tAVAV tWC Write Cycle Time 100 ns tPHWL tPS RP High Recovery to WE Going Low 2 1 m s tELWL tCS CE Setup to WE Going Low 10 ns tWLWH tWP WE Pulse Width 40 ns tVPWH tVPS VPP Setup to WE Going High 2 100 ns tAVWH tAS Address Setup to WE Going High 3 40 ns tDVWH tDS Data Setup to WE Going High 4 40 ns tWHDX tDH Data Hold from WE High 5 ns tWHAX tAH Address Hold from WE High 5 ns tWHEH tCH CE Hold from WE High 10 ns tWHWL tWPH WE Pulse Width High 30 ns tWHRL WE High to RYBY Going Low 100 ns tWHQV1 Duration of Byte Write Operation 5 6 6 m s tWHQV2 Duration of Block Erase Operation 5 6 03 sec tWHGL Write Recovery before Read 0 m s tQVVL tVPH VPP Hold from Valid SRD RYBY High 2 6 0 ns NOTES 1 Read timing characteristics during erase and byte write operations are the same as during read-only operations Refer to AC Characteristics for Read-Only Operations 2 Sampled not 100% tested 3 Refer to Table 3 for valid AIN for byte write or block erasure 4 Refer to Table 3 for valid DIN for byte write or block erasure 5 The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard Intel flash memory including byte program and verify (byte write) and block precondition precondition verify erase and erase verify (block erase) 6 Byte write and block erase durations are measured to completion (SR7 e 1 RYBY e VOH) VPP should be held at VPPH until determination of byte writeblock erase success (SR345 e 0) 7 See High Speed AC InputOutput Reference Waveforms and High Speed AC Testing Load Circuits for testing characteris- tics 8 See AC InputOutput Reference Waveforms and AC Testing Load Circuits for testing characteristics 27 |
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