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STN2NF10 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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STN2NF10 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 5 page ![]() SMD Type www.kexin.com.cn 1 MOSFET N-Channel MOSFET STN2NF10 (KTN2NF10) ■ Features ● VDS (V) = 100V ● ID = 2.4 A (VGS = 10V) ● RDS(ON) < 260mΩ (VGS = 10V) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 100 VGS ± 20 Tc=25℃ 2.4 Tc=100℃ 1.5 IDM 17 Power Dissipation Tc=25℃ PD 3.3 W EAS 200 mJ dv/dt 30 V/ns t < 10sec 38 t > 10sec 62.5 TJ 150 Tstg -55 to 150 Peak diode recovery voltage slope (Note.2) Single pulse avalanche energy (Note.1) Thermal Resistance.Junction- to-Ambient RthJA V A Pulsed Drain Current Parameter Continuous Drain Current ID Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range ℃ /W ℃ Note.1: IAS = 2.4A, VDD = 30V, Rg=4.7Ω, starting Tj = 25°C Note.2: ISD < 6A, di/dt < 500A/μs, VDD= 80% V(BR)DSS G D S 0.70±0.1 4.60 (typ) 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 4 1 2 3 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain |
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