STN2NF10 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

N-Channel MOSFET

STN2NF10 (KTN2NF10)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

100

VDS=100V, VGS=0V

VDS=100V, VGS=0V, TC=125℃

VDS=30V, VGS=0V, TC=125℃

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

Static Drain-Source On-Resistance

RDS(On)

VGS=10V, ID=1.2A

230

260

mΩ

Forward Transconductance

gFS

VDS=15V, ID=1.2A

2.5

Input Capacitance

Ciss

280

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Gate Source Charge

Qgs

2.5

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

175

Reverse recovery current

IRRM

Maximum Body-Diode Continuous Current

2.4

Source-drain current (pulsed)

ISM

Diode Forward Voltage (Note.1)

VSD

IS=2.4A,VGS=0V

1.2

Zero Gate Voltage Drain Current

IDSS

VGS=10V, VDS=50V, ID=2.4A,RG=4.7Ω

IF= 6A, VDD=10V, dI/dt= 100A/μs

VGS=0V, VDS=25V, f=1MHz

VGS=10V, VDS=80V, ID=6A

Note.1: Pulsed: pulse duration = 300μs, duty cycle 1.5%

■

Marking

N2NF10

STN2NF10 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

STN2NF10 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2 3 4 5

Datasheet Download

Link URL