IRFD1Z2 datasheet(2/6 Pages) INTERSIL

2 / 6 page

5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFD1Z0

IRFD1Z1

IRFD1Z2

IRFD1Z3

UNITS

Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

100

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .VDGR

100

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

0.5

0.4

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

4.0

3.2

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD

1.0

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . .

0.008

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg

300

260

300

260

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (See Figure 9)

IRFD1Z0, IRFD1Z2

100

IRFD1Z1, IRFD1Z3

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V,

TC = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

(See Figure 6)

IRFD1Z0, IRFD1Z1

0.5

IRFD1Z2, IRFD1Z3

0.4

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 0.25A, VGS = 10V (See Figures 7, 8)

IRFD1Z0, IRFD1Z1

2.2

2.4

Ω

IRFD1Z2, IRFD1Z3

2.8

3.2

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A

0.25

0.35

Turn-On Delay Time

td(ON)

VDD ≅ 0.5 x Rated BVDSS, ID = 0.25A,

RG = 50Ω (Figures 14, 15, 16)

RL = 198Ω for BVDSS = 100V

RL = 118Ω for BVDSS = 60V

MOSFET Switching Times are Essentially Inde-

pendent of Operating Temperature

-10

Rise Time

-15

Turn-Off Delay Time

td(OFF)

-15

Fall Time

-10

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS

(Figures 13, 16, 17) Gate Charge is Essentially

Independent of Operating Temperature

2.0

3.0

Gate to Source Charge

Qgs

1.0

Gate to Drain “Miller” Charge

Qgd

1.0

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1MHz

(Figure 10)

-50

Output Capacitance

COSS

-20

Reverse Transfer Capacitance

CRSS

-5

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

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