5-3

Internal Drain Inductance

Measured From The

Drain Lead, 2mm

(0.08in) From Package

to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

4.0

-

nH

Internal Source Inductance

Measured From The

Source Lead, 2mm

(0.08in) From Header to

Source Bonding Pad

-

6.0

-

nH

Thermal Resistance Junction to Ambient

Free Air Operation

-

-

120

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

IRFD1Z0, IRFD1Z1

-

-

0.5

A

IRFD1Z2, IRFD1Z3

-

-

0.4

A

Pulse Source to Drain Current

IRFD1Z0, IRFD1Z1

-

-

4.0

A

IRFD1Z2, IRFD1Z3

-

-

3.2

A

Source to Drain Diode Voltage (Note 2)

IRFD1Z0, IRFD1Z1

-

-

1.4

V

IRFD1Z2, IRFD1Z3

-

-

1.3

V

Reverse Recovery Time

-

100

-

ns

Reverse Recovery Charge

-

0.2

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

FIGURE 1. NORMALIZED POWER DISSIPATION vs

AMBIENT TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

G

D

S

G

D

S

0.0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

50

75

100

25

150

0.4

0.2

0

0.1

125

0.3

IRFD1Z0, IRFD1Z1

IRFD1Z2, IRFD1Z3

0.5

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3