RFD15P05 datasheet(2/8 Pages) INTERSIL

2 / 8 page

4-97

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

RFD15P05, RFD15P05SM,

RFP15P05

UNITS

Drain Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

-50

Drain Gate Voltage (RG = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-50

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

-15

Refer to Peak Current Curve

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.533

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

-50

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

-2.0

-4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS

-1

µA

VDS = 0.8 x Rated BVDSS, TC = 150

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance

rDS(ON)

ID = 15A, VGS = -10V (Figure 9)

0.150

Ω

Turn-On Time

tON

VDD = -25V, ID ≈ 7.5A, RG = 12.5Ω,

RL = 3.3Ω, VGS = -10V

(Figures 16, 17)

Turn-On Delay Time

tD(ON)

-16

Rise Time

-30

Turn-Off Delay Time

tD(OFF)

-50

Fall Time

-20

Turn-Off Time

tOFF

100

Total Gate Charge

QG(TOT)

VGS = 0V to -20V VDD = -40V, ID = 15A,

RL = 2.67Ω,

IG(REF) = -0.65mA

(Figures 18, 19)

150

Gate Charge at -10V

QG(-10)

VGS = 0V to -10V

Threshold Gate Charge

QG(TH)

VGS = 0V to -2V

3.5

Input Capacitance

CISS

VDS = -25V, VGS = 0V

f = 1MHz (Figure 12)

1150

Output Capacitance

COSS

300

Reverse Transfer Capacitance

CRSS

-56

Thermal Resistance Junction to Case

RθJC

TO-220AB, TO-251AA, TO-252AA

1.875

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251AA, TO-252AA

100

oC/W

TO-220AB

62.5

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = -15A

-1.5

Reverse Recovery Time

tRR

ISD = -15A, dISD/dt = -100A/µs

125

NOTES:

2. Pulse test: pulse duration

≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

RFD15P05, RFD15P05SM, RFP15P05

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