R5F10366ASP datasheet(102/110 Pages) RENESAS

102 / 110 page

RL78/G12

3. ELECTRICAL SPECIFICATIONS (G: TA =

−40 to +105°C)

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 102 of 106

3.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics

(TA =

−40 to +105°C, VSS = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Data retention supply voltage

VDDDR

1.44

Note

5.5

Note

The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR

reset is affected, but data is not retained when a POR reset is affected.

VDD

VDDDR

STOP instruction execution

Standby release signal

(interrupt request)

STOP mode

Data retention mode

Operation mode

3.8 Flash Memory Programming Characteristics

(TA =

−40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

System clock frequency

fCLK

MHz

Code flash memory rewritable times

Notes 1, 2, 3

Cerwr

Retained for 20 years

TA = 85°C

1,000

Times

Data flash memory rewritable times

Notes 1, 2, 3

Retained for 1 year

TA = 25°C

1,000,000

Retained for 5 years

TA = 85°C

100,000

Retained for 20 years

TA = 85°C

10,000

Notes 1.

1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the

rewrite.

When using flash memory programmer and Renesas Electronics self programming library

These are the characteristics of the flash memory and the results obtained from reliability testing by

Renesas Electronics Corporation.

R5F10366ASP Datasheet(PDF) 102 Page - Renesas Technology Corp

R5F10366ASP Datasheet(HTML) 102 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL