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ACE4702 Datasheet(PDF) 11 Page - ACE Technology Co., LTD. |
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ACE4702 Datasheet(HTML) 11 Page - ACE Technology Co., LTD. |
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11 / 15 page ![]() ACE4702 2 Cell Li-ion Battery Charger IC VER 1.1 11 Use Table 2 as a guide for selecting the correct inductor value for your application. Charge Current Input Voltage Inductor Value 1A >20V 40uH <20V 30uH 2A >20V 30uH <20V 20uH 3A >20V 20uH <20V 15uH 4A >20V 15uH <20V 10uH 5A >20V 10uH <20V 8uH Table 2 Guide to Select Inductor Value MOSFET Selection The ACE4702 uses a P-channel power MOSFET switch. The MOSFET must be selected to meet the efficiency or power dissipation requirements of the charging circuit as well as the maximum temperature of the MOSFET. The peak-to-peak gate drive voltage is set internally, this voltage is typically 5.8V. Consequently, logic-level threshold MOSFETs must be used. Pay close attention to the BVDSS specification for the MOSFET as well; many of the logic level MOSFETs are limited to 30V or less. Selection criteria for the power MOSFET includes the “on” resistance Rds(on), total gate charge Qg, reverse transfer capacitance CRSS, input voltage and maximum charge current. The MOSFET power dissipation at maximum output current is approximated by the equation: Where: Pd is the power dissipation of the power MOSFET VBAT is the maximum battery voltage VCC is the minimum input voltage Rds(on) is the power MOSFET’s on resistance at room temperature ICH is the charge current dT is the temperature difference between actual ambient temperature and room temperature(25℃) In addition to the I 2R ds(on) loss, the power MOSFET still has transition loss, which are highest at the highest input voltage. Generally speaking, for VIN<20V, the I 2R ds(on) loss may be dominant, so the MOSFET with lower Rds(on) should be selected for better efficiency; for VIN>20V, the transition loss may be dominant, so the MOSFET with lower CRSS can provide better efficiency. CRSS is usually specified in the MOSFET characteristics; if not, then CRSS can be calculated using CRSS = QGD /ΔV DS. The MOSFETs such as ACE9435, ACE4443, ACE7401, ACE4409 can be used. The part numbers listed above are for reference only, the users can select the right MOSFET based on their requirements. |
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