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2SC4536 Datasheet(PDF) 1 Page - California Eastern Labs |
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2SC4536 Datasheet(HTML) 1 Page - California Eastern Labs |
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1 / 10 page ![]() NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 / NE46134 FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST 4 3 1 6 4 E N 0 0 1 6 4 E N R E B M U N T R A P EIAJ1 6 3 5 4 C S 2 R E B M U N D E R E T S I G E R 4 3 ) P I H C ( 0 0 E N I L T U O E G A K C A P X A M P Y T N I M X A M P Y T N I M S T I N U S N O I T I D N O C D N A S R E T E M A R A P S L O B M Y S fT Gain Bandwidth Product at VCE = 10 V, IC 5 . 5 5 . 5 z H G A m 0 0 1 = NFMIN Minimum Noise Figure3 at VCE = 10 V, IC = 50 mA, 500 MHz dB 1.5 1.5 VCE = 10 V, IC 0 . 2 0 . 2 B d z H G 1 , A m 0 5 = GL Linear Gain, VCE = 12.5 V, IC 0 . 9 B d z H G 0 . 2 , A m 0 0 1 = VCE = 12.5 V, IC 0 . 8 B d z H G 0 . 1 , A m 0 0 1 = |S21E|2 0 . 7 5 . 5 0 . 0 1 B d z H G 0 . 1 = f , A m 0 5 , V 0 1 t a ni a G r e w o P n oi tr e s n I hFE DC Current Gain2 at VCE = 10 V, IC 0 0 2 0 4 0 0 2 0 4 A m 0 5 = ICBO Collector Cutoff Current at VCB = 20 V, IE = 0 mA . A 5.0 5.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 mA A 5.0 5.0 P1dB Output Power at 1 dB Compression, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dBm 27.0 VCE = 12.5 V, IC 5 . 7 2 m B d z H G 0 . 1 , A m 0 0 1 = IM3 Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz, Total POUT 0 . 0 4 - 0 . 0 4 - c B d m B d 0 2 = RTH (J-C) Thermal Resistance (Junction to Case) C/W 30 32.5 RTH (J-A) Thermal Resistance (Junction to Ambient) 5 . 2 1 3 W / C Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed: PW 350 ms, Duty Cycle 2% 3. RS = RL = 50 untuned DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transis- tors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combina- tion of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent perfor- mance and reliability at low cost through titanium, platinum, gold metallization system and direct nitride passiva- tion of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form. NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA Input Power, PIN (dBm) ELECTRICAL CHARACTERISTICS (TA = 25 C) 5 10 15 20 25 30.0 28.0 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 V 10 V 12.5 V |
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