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2SC4536 Datasheet(PDF) 1 Page - California Eastern Labs

Part # 2SC4536
Description  NPN MEDIUM POWER MICROWAVE TRANSISTOR
PDF  10 Pages
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

2SC4536 Datasheet(HTML) 1 Page - California Eastern Labs

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NPN MEDIUM POWER MICROWAVE TRANSISTOR
NE46100 / NE46134
FEATURES
• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST
4
3
1
6
4
E
N
0
0
1
6
4
E
N
R
E
B
M
U
N
T
R
A
P
EIAJ1
6
3
5
4
C
S
2
R
E
B
M
U
N
D
E
R
E
T
S
I
G
E
R
4
3
)
P
I
H
C
(
0
0
E
N
I
L
T
U
O
E
G
A
K
C
A
P
X
A
M
P
Y
T
N
I
M
X
A
M
P
Y
T
N
I
M
S
T
I
N
U
S
N
O
I
T
I
D
N
O
C
D
N
A
S
R
E
T
E
M
A
R
A
P
S
L
O
B
M
Y
S
fT
Gain Bandwidth Product at VCE = 10 V, IC
5
.
5
5
.
5
z
H
G
A
m
0
0
1
=
NFMIN
Minimum Noise Figure3 at VCE = 10 V, IC = 50 mA, 500 MHz
dB
1.5
1.5
VCE = 10 V, IC
0
.
2
0
.
2
B
d
z
H
G
1
,
A
m
0
5
=
GL
Linear Gain, VCE = 12.5 V, IC
0
.
9
B
d
z
H
G
0
.
2
,
A
m
0
0
1
=
VCE = 12.5 V, IC
0
.
8
B
d
z
H
G
0
.
1
,
A
m
0
0
1
=
|S21E|2
0
.
7
5
.
5
0
.
0
1
B
d
z
H
G
0
.
1
=
f
,
A
m
0
5
,
V
0
1
t
a
ni
a
G
r
e
w
o
P
n
oi
tr
e
s
n
I
hFE
DC Current Gain2 at VCE = 10 V, IC
0
0
2
0
4
0
0
2
0
4
A
m
0
5
=
ICBO
Collector Cutoff Current at VCB = 20 V, IE = 0 mA .
A
5.0
5.0
IEBO
Emitter Cutoff Current at VEB = 2 V, IC = 0 mA
A
5.0
5.0
P1dB
Output Power at 1 dB Compression, VCE = 12.5 V, IC = 100 mA, 2.0 GHz
dBm
27.0
VCE = 12.5 V, IC
5
.
7
2
m
B
d
z
H
G
0
.
1
,
A
m
0
0
1
=
IM3
Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,
Total POUT
0
.
0
4
-
0
.
0
4
-
c
B
d
m
B
d
0
2
=
RTH (J-C)
Thermal Resistance (Junction to Case)
C/W
30
32.5
RTH (J-A)
Thermal Resistance (Junction to Ambient)
5
.
2
1
3
W
/
C
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed: PW 350 ms, Duty Cycle 2%
3. RS = RL = 50 untuned
DESCRIPTION
The NE461 series of NPN silicon epitaxial bipolar transis-
tors is designed for medium power applications requiring high
dynamic range. This device exhibits an outstanding combina-
tion of high gain and low intermodulation distortion, as well as
low noise figure. The NE461 series offers excellent perfor-
mance and reliability at low cost through titanium,
platinum, gold metallization system and direct nitride passiva-
tion of the surface of the chip. Devices are available in a low
cost surface mount package (SOT-89) as well as in chip form.
NE46134
TYPICAL OUTPUT POWER
vs. INPUT POWER
f = 1.0 GHz, IC = 100 mA
Input Power, PIN (dBm)
ELECTRICAL CHARACTERISTICS (TA = 25 C)
5
10
15
20
25
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
5 V
10 V
12.5 V


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