SSD30P06_15 datasheet(2/4 Pages) SECOS

2 / 4 page

SSD30P06-45D

P-Ch Enhancement Mode Power MOSFET

28A, -60V, RDS(ON) 49mΩ

Elektronische Bauelemente

16-Aug-2010 Rev.A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBO MIN.

TYP. MAX. UNIT

TEST CONDITIONS

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS= VGS, ID = -250 μA

Gate-Body Leakage

IGSS

±100

VDS = 0V, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -48V, VGS= 0V

-10

VDS= -48V, VGS=0V, TJ=55°C

On-State Drain Current

ID(on)

-20

VDS = -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -10V, ID= -28A

VGS= -4.5V, ID= -24A

Forward Transconductance

gfs

VDS= -15V, ID= -28A

Diode Forward Voltage

VSD

-1.2

IS= -2.5 A, VGS= 0 V

Dynamic

Total Gate Charge

VDS = -30 V

VGS = -4.5 V

ID = -28 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay Time

Td(on)

VDD= -30 V

ID= -1 A

VGEN = -10 V

RL= 30 

RG= 6 

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes

Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.

Guaranteed by design, not subject to production testing.

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