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SSD30P06 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SSD30P06 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 4 page ![]() SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS(ON) 49mΩ Elektronische Bauelemente 16-Aug-2010 Rev.A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE s c i t s i r e t c a r a h C r e f s n a r T s c i t s i r e t c a r a h C t u p t u O On-Resistance vs. Junction Temperature Gate Charge Capacitance On-Resistance vs. Drain Current 0 3 6 9 12 15 012 345 VDS - Drain-to-Source Voltage (V) -4.5V VGS = -10V 0 3 6 9 12 15 12345 VGS - Gate-to-Source Voltage (V) TA = -55oC 25oC 125oC 0.8 1 1.2 1.4 1.6 1.8 024 6 8 10 ID - Drain Current (A) -10V -4.5V -10 -8 -6 -4 -2 0 0 6 12 18 24 30 36 Qg, Charge (nC) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 V DS - Drai n -to-S ou rce Vol tage (V) Ciss Coss Crss 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature VGS = -10V |
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