AN3152

Conclusion

Doc ID 17056 Rev 1

15/17

5

Conclusion

The special requirements of the photovoltaic field provide an interesting application area for

ST’s new MDmesh™ V power MOSFETs and SiC diodes. These new technologies can

operate at high frequencies with very good efficiency, leading to a reduction in the size of

passive components, saving cost and board space. These innovative devices are tested in a

new PV inverter prototype. Thanks to performance of the 600-650 V power MOSFETs and

diodes used in the prototype, a new inverter topology is possible which permits galvanic

insulation with a good trade-off between cost, weight and size.