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AN3432 Datasheet(PDF) 6 Page - STMicroelectronics |
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AN3432 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 24 page ![]() Photocurrent production basics of silicon solar cells AN3432 6/24 Doc ID 019041 Rev 1 Considering the example of a 190 W solar panel. In standard test conditions (STC) @Tamb = 25 °C, Voc = 33 V, Isc = 7.89 A: αIsc = 0.05%/°C; αVoc = -0.4%/°C at an operating temperature range of -40 °C, 85 °C. That is, the Voc deviation is 26% versus Voc (STC) Then, Isc max is 3% higher than Isc (STC) 1.4 Hot spot phenomenon The hot spot phenomenon happens when one cell of the panel is shaded while the others are illuminated, and when this shaded cell is not able to exhaust its generated power dissipation. The shaded cell behaves as a diode polarized in reverse and generates reverse power Ps. The other cells generate a current that flows through the shaded cell and the load Rload. Any solar cell has its own critical power dissipation Pc that must not be exceeded and depends on its cooling and material structures, its area, its maximum operating temperature and ambient temperature. A shaded cell may be destroyed when its reverse dissipation exceeds Pc. This is the hot spot. The manufacturers usually define a breakdown voltage Vc. Its value depends on the solar cell technology (poly-silicon or mono-silicon) and the manufacturing process. Voc(-40 °C) = 33 + Voc(-40 °C) = Vocmax = 41.6 V 33 · -0.4 100 · (-40 -25) Isc(85 °C) = 7.89 + Isc(85 °C) = Iscmax = 8.13 A 7.89 · 0.05 100 ·(85 - 25) |
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