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AN3432 Datasheet(PDF) 6 Page - STMicroelectronics

Part # AN3432
Description  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3432 Datasheet(HTML) 6 Page - STMicroelectronics

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Photocurrent production basics of silicon solar cells
AN3432
6/24
Doc ID 019041 Rev 1
Considering the example of a 190 W solar panel. In standard test conditions (STC)
@Tamb = 25 °C, Voc = 33 V, Isc = 7.89 A:
αIsc = 0.05%/°C; αVoc = -0.4%/°C at an operating temperature range of -40 °C, 85 °C.
That is, the Voc deviation is 26% versus Voc (STC)
Then, Isc max is 3% higher than Isc (STC)
1.4
Hot spot phenomenon
The hot spot phenomenon happens when one cell of the panel is shaded while the others
are illuminated, and when this shaded cell is not able to exhaust its generated power
dissipation.
The shaded cell behaves as a diode polarized in reverse and generates reverse power Ps.
The other cells generate a current that flows through the shaded cell and the load Rload.
Any solar cell has its own critical power dissipation Pc that must not be exceeded and
depends on its cooling and material structures, its area, its maximum operating temperature
and ambient temperature. A shaded cell may be destroyed when its reverse dissipation
exceeds Pc. This is the hot spot.
The manufacturers usually define a breakdown voltage Vc. Its value depends on the solar
cell technology (poly-silicon or mono-silicon) and the manufacturing process.
Voc(-40 °C) = 33 +
Voc(-40 °C) = Vocmax = 41.6 V
33 · -0.4
100
· (-40 -25)
Isc(85 °C) = 7.89 +
Isc(85 °C) = Iscmax = 8.13 A
7.89 · 0.05
100
·(85 - 25)



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