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AN3432 Datasheet(PDF) 14 Page - STMicroelectronics |
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AN3432 Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 24 page ![]() Application constraints AN3432 14/24 Doc ID 019041 Rev 1 3.1.2 Thermal runaway risk The thermal runaway results in the loss of temperature control, due to the inability to exhaust the power losses generated by the diode operation. In the bypass diode application, the most critical case is when the diode conducts and suddenly turns off. At this specific time t0 the following rule is applied to eliminate thermal runaway risk: Equation 14 The junction temperature depends on the junction box thermal resistance between ambient temperature (Ta) and diode case temperature (Tc) and the thermal resistance between the diode junction and the diode case, given in the diode datasheet as the Rth(j-c) parameter. The power losses and these parameters are linked by the thermal law. Equation 15 and The conduction losses are given by: Equation 16 A graphical interpretation is presented in Figure 10 with STPS20L45C diode, the current is 8 A, the ambient temperature is 60 °C, Rth(c-a) = 3 °C/W, Rth(j-c) = 1.3 °C/W. The green curve is the heat power that the junction can dissipate. The blue curve is the conduction losses generated by the diode. The curves cross point gives the junction temperature at the specific time t0. In this condition, the junction temperature Tj@t0 = 70 °C is shown in Figure 10. ) T ( P j@to cond j@to rev ) T ( > P j Thermal ) = T ( P (Tj -Ta) Rth(j-c) + Rth(c-a) ) T ( P j@to cond j@to Thermal ) T ( = P sc j sc F j cond I )· T , I ( V ) T ( P = |
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