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Conclusion

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4

Conclusion

In this application note an experimental investigation of the advantages and drawbacks

related to the use of new devices of the last generation has been carried out in a

and a SiC Schottky diode have been used. The experimental results show that the power

converter using the new devices gets better switching performances and increased

efficiency with respect to the case that uses the same MOSFET and an ultrafast silicon

diode. The better performance in terms of efficiency and thermal behavior allow using

smaller heatsinks, saving cost and space. The no-reverse recovery for the SiC diode allows

using a lower gate resistance (high di/dt) optimizing the MOSFET power losses without

introducing high level EMI. In this case we have a high value of di/dt (the recovery current of

the SiC diode is smaller for every value of di/dt) , but the switching losses are reduced in the

MOSFET ( turn-on is faster with Rg = 0

Ω) with respect to the case of the silicon diode