DocID025494 Rev 1

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AN4390

Technologies for UPS systems

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On the other side, considering devices with the same BV

DSS

and die size, STripFET IV

DeepGATE technology has lower intrinsic capacitances and total gate charge (~ -20% for

Q

G

@ V

GS

= 10 V). Obviously, for low switching frequency (<100 kHz), higher intrinsic

capacitances don't affect the device’s performance (especially, temperature and efficiency).

3.1

STripFET IV DeepGATE technology

The STP90N55F4 is a 55 V Power MOSFET, housed in TO-220 and realized with STripFET

IV DeepGATE technology. Steady-state and turn-off waveforms, mounted as high-side and

low-side switches in a 1500 VA UPS, are reported in

Figure 7 and Figure 8.

Figure 7. STP90N55F4 steady-state waveforms

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Table 1. STP90N55F4 main electrical parameters

Type

STP90N55F4

6 m

Ω

3.2 V

> 55 V

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