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AN2657 Datasheet(PDF) 6 Page - STMicroelectronics |
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AN2657 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 18 page ![]() Model description and parameter extraction AN2657 6/18 Equation 5 Another important parameter to define is the gain factor with zero bias. Referring to Equation 5, 6 and 7, the gain factor degrades according to the Vgs voltage (mobility degradation). Equation 8 and 9, which define the drain saturation voltage, complete the set of equations needed to define the generator current (Equation 10 and 11). Equation 6 Equation 7 Equation 8 Equation 9 Equation 10 Equation 11 The automatic ADS optimizer was used to extract the parameters for the current generator. The threshold voltage and the gain factor have been extracted from the input characteristics with Vds at a low voltage level. Concerning mobility degradation, the transconductance parameter was used varying Vds and with Vgs at a high voltage level. The sub-threshold voltage was extracted from the input characteristics with a gate voltage level below the threshold voltage level. KP KP0 T ° K () T NOM ° K () ---------------------------- ⎝⎠ ⎛⎞ DTKP ⋅ = - FV gst () 1 1T V vgT gst T I V I gst ⋅ I2 = 9 ∑ + ⋅ + ⎩ ⎪ ⎪ ⎨ ⎪ ⎪ ⎧ = V gst 0 ≤ V gst 0 > KP EFF KP FV gst () -------------------- = AL0 2 L 2 – = B L δ --- L0 2 ⋅ = CKE L 3 ⋅ = δ∆∆VG Vgg ⋅ + = D 1 BA – () Vgg V TH – () C1 δ – () ⋅ – ⋅ = D 2 D 2 1 4C Vgg V TH – () 1 δ + () 0.5 A B – ⋅ () ⋅⋅ ⋅ ⋅ – = δ∆∆VG Vgg ⋅ + = VDSAT D 2 D 1 + 1 δ + () 2B A – ⋅ () ⋅ ------------------------------------------------------ = I DS KP EFF Vds V ( gg V TH – 0.05 Vds 1 ∆ + () ) ⋅ ⋅ – ⋅⋅ IDSS 1 A Vds VDSAT – BVDSAT C + ⋅ ------------------------------------------- ⋅ + ⎝⎠ ⎛⎞ ⋅ ⎩ ⎪ ⎨ ⎪ ⎧ = V DS VDSAT < V DS VDSAT ≥ IDSS KP EFF VDSAT Vgg V TH – 0.5 VDSAT 1 ∆ + () ⋅⋅ – () ⋅⋅ = |
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