2DB1182Q

Document number: DS35651 Rev. 3 - 2

2 of 6

www.diodes.com

November 2014

© Diodes Incorporated

2DB1182Q

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-32

V

Emitter-Base Voltage

-5

V

Continuous Collector Current

-2

A

Peak Pulse Collector Current

-3

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

1.2

W

(Note 6)

15

W

Thermal Resistance, Junction to Ambient

(Note 5)

104

°C/W

Thermal Resistance, Junction to Lead

(Note 6)

8.3

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Note:

5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided

1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

10,000

t , PULSE DURATION TIME (s)

1

Figure 1 Transient Thermal Response

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

J

A

JA

12



R

(t) = r(t) *

JA

R

R

= 110°C/W





JA

JA

P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9