2DB1182Q

Document number: DS35651 Rev. 3 - 2

3 of 6

www.diodes.com

November 2014

© Diodes Incorporated

2DB1182Q

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Collector-Base Breakdown Voltage

-40





V

Collector-Emitter Breakdown Voltage

-32





V

Emitter-Base Breakdown Voltage

-5





V

Collector Cutoff Current





-1

A

Emitter Cutoff Current





-1

A

ON CHARACTERISTICS (Note 8)

Collector-Emitter Saturation Voltage





-0.8

V

DC Current Gain

120



270



SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product



110



MHz

f = 30MHz

Output Capacitance



26



pF

Turn-On Time

—



109

—



ns

Delay Time

—



60

—



ns

Rise Time

—



49

—



ns

Turn-Off Time

—



280

—



ns

Storage Time

—



246

—



ns

Fall Time

—



34

—



ns

Note:

8. Measured under pulsed conditions. Pulse width = 300

s. Duty cycle 2%.

0

200

400

600

800

1,000

0.1

1

10

Figure 2 Typical Collector Current vs. Collector-Emitter Voltage

-V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

I = -1mA

B

I = -2mA

B

I = -3mA

B

I = -4mA

B

I = -5mA

B

0

50

100

150

200

250

300

350

400

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Figure 3 Typical DC Current Gain vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 125°C

A

V

= -3V

CE