SP8256 datasheet(1/7 Pages) SAMHOP

Part #	SP8256

Description	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

Logo

1 / 7 page

Suface Mount Package.

S mHop Microelectronics C orp.

a

SP8256

Symbol

VDS

VGS

IDM

75

W

A

PD

°C

1.67

-55 to 150

ID

Units

Parameter

20

11

90

°C/W

V

±12

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

20V

11A

8.6

@

VGS=3.9V

8.3

@

VGS=4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

c

-Pulsed ac

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

www.samhop.com.tw

Dec,26,2014

1

Details are subject to change without notice.

TA=25°C

TA=70°C

A

TA=70°C

W

Dual N-Channel Enhancement Mode Field Effect Transistor

Green

Product

ESD Protected.

G2

S1

G1

S2

1

2

3

4

5

6

Bottom Drain Contact

8.8

1.07

10.0

@

VGS=3.1V

12.5

@

VGS=2.5V

9.0

@

VGS=3.5V

D

DF

F N

N 2

2X

X 5

5

(Bottom view)

G1

S1

G2

S2

D1/D2

Ver 1.3

5.5

°C/W

Thermal Resistance, Junction-to-Case

R JC

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