SP8256 datasheet(2/7 Pages) SAMHOP

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±10

VGS(th)

0.5

m ohm

VGS=4.5V , ID=5.5A

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=1.0mA

VDS=16V , VGS=0V

VGS=±10V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=250uA

ON CHARACTERISTICS

SP8256

0.74

1.5

gFS

CISS

873

COSS

278

CRSS

185

Qgs

Qgd

tD(ON)

15.6

2.5

tD(OFF)

6.7

Gate-Drain Charge

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=16V

ID=5.5A

VGS=4.5V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=10V , ID=5.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Reverse Transfer Capacitance

VGS=3.9V , ID=5.5A

m ohm

f=1.0MHz

VDS=16V,ID=11A,

VGS=4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD

Diode Forward Voltage

VGS=0V,IS=11A

0.84

1.2

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

www.samhop.com.tw

Dec,26,2014

6.8

8.3

7.1

8.6

VGS=3.5V , ID=5.5A

m ohm

VGS=2.5V , ID=5.5A

m ohm

10.0

12.5

5.2

5.5

7.5

VGS=3.1V , ID=5.5A

m ohm

8.0

10.0

6.5

7.3

9.0

6.0

Ver 1.3

SP8256 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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