STB458D datasheet(7/11 Pages) SAMHOP

Part #	STB458D

Description	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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7 / 11 page

STB458D

www.samhop.com.tw

Apr,23,2010

T j( C )

-VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

-ID, Drain Current (A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature ( C )

Figure 4. On-Resistance Variation with

Drain Current and Temperature

Tj, Junction Temperature ( C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature ( C )

Figure 6. Breakdown Voltage Variation

with Temperature

0.5

1.0

1.5

2.0

2.5

3.0

VGS =-4V

VGS =-3.5V

VGS =-4.5V

VGS =-10V

0.7

4.2

3.5

2.8

2.1

1.4

T j=125 C

25 C

-55 C

V GS =-10V

V GS =-4.5V

1.5

1.4

1.3

1.2

1.1

1.0

100

125

150

V G S =-4.5V

ID=-10A

V G S =-10V

ID=-12A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

Ver 1.0

P-Channel

VGS =-3V

VGS =-5V

V DS =V GS

ID=-250uA

-VGS, Gate-to-Source Voltage(V)

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