DMN2016LHAB

Document number: DS36133 Rev. 5 - 2

2 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMN2016LHAB

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Steady

State

7.5

5.8

A

t < 10s

7.7

6.0

A

Pulsed Drain Current (10μs pulse, duty cycle = 1% )

45

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.2

W

0.75

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

106

°C/W

t < 10s

100

Total Power Dissipation (Note 6)

1.65

W

1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

78

°C/W

t < 10s

72

Thermal Resistance, Junction to Case

11.4

Operating and Storage Temperature Range

-55 to 150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

—

—

V

—

—

1.0

μA

Gate-Source Leakage

—

—

±10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

0.71

1.1

V

Static Drain-Source On-Resistance

—

13

15.5

m

Ω

13.5

16.5

14

19

15

20

21

30

Forward Transfer Admittance

—

25

—

S

Diode Forward Voltage

—

0.75

1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

1550

—

pF

f = 1.0MHz

Output Capacitance

—

166

—

pF

Reverse Transfer Capacitance

—

145

—

pF

Gate Resistance

—

1.37

—

Ω

—

8.4

—

nC

—

16

—

nC

Gate-Source Charge

—

2.3

—

nC

Gate-Drain Charge

—

2.5

—

nC

Turn-On Delay Time

—

6.9

—

ns

Turn-On Rise Time

—

15.5

—

ns

Turn-Off Delay Time

—

40.9

—

ns

Turn-Off Fall Time

—

12

—

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad

7. Repetitive rating, pulse width limited by junction temperature

8. Guaranteed by design. Not subject to product testing