Dec 2010

BV

R

I

HFS8N80

800V N-Channel MOSFET

TO-220F

2

1

3

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 35 nC (Typ )

FEATURES

1.Gate 2. Drain 3. Source

Unrivalled Gate Charge : 35 nC (Typ.)

Extended Safe Operating Area

Lower R

(Typ.) @V

100% Avalanche Tested

Absolute Maximum Ratings

T

unless otherwise specified

Symbol

Parameter

Value

Units

V

Drain Source Voltage

800

V

V

DSS

Drain-Source Voltage

800

V

I

D

Drain Current

– Continuous (T

8.0*

A

Drain Current

– Continuous (T

5.0*

A

I

DM

Drain Current

– Pulsed

(Note 1)

32*

A

V

GS

Gate-Source Voltage

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

580

mJ

I

Avalanche Current

(Note 1)

80

A

I

AR

Avalanche Current

(Note 1)

8.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

16.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

P

D

Power Dissipation (T

56

W

0.44

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

300

Thermal Resistance Characteristics

1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

2.25

R

JA

Junction-to-Ambient

--

62.5

* Drain current limited by maximum junction temperature