HFS8N80 datasheet(3/7 Pages) SEMIHOW

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Typical Characteristics

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

150

-55

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

-1

-2

-1

Notes :

1. 250 s Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

-1

Notes :

1. V

DS = 50V

2. 250 s Pulse Test

GS, Gate-Source Voltage [V]

2.5

3.0

3.5

4.0

GS = 20V

GS = 10V

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

121518

1.0

1.5

2.0

Note : T

J = 25

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150

Notes :

1. V

GS = 0V

2. 250 s Pulse Test

SD, Source-Drain voltage [V]

Drain Current and Gate Voltage

Variation with Source Current

and Temperature

1500

2000

2500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

iss

= 400V

= 160V

= 640V

-1

500

1000

Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

DS, Drain-Source Voltage [V]

* Note : I

= 8.0A

, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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