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DMN2005LPK-7 Datasheet(PDF) 5 Page - Diodes Incorporated

Part # DMN2005LPK-7
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2005LPK-7 Datasheet(HTML) 5 Page - Diodes Incorporated

  DMN2005LPK-7 Datasheet HTML 1Page - Diodes Incorporated DMN2005LPK-7 Datasheet HTML 2Page - Diodes Incorporated DMN2005LPK-7 Datasheet HTML 3Page - Diodes Incorporated DMN2005LPK-7 Datasheet HTML 4Page - Diodes Incorporated DMN2005LPK-7 Datasheet HTML 5Page - Diodes Incorporated DMN2005LPK-7 Datasheet HTML 6Page - Diodes Incorporated DMN2005LPK-7 Datasheet HTML 7Page - Diodes Incorporated  
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DMN2005LPK
Document number: DS30836 Rev. 10 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN2005LPK
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
T = 25°C
A
0
10
20
30
40
50
60
0
5
10
15
20
Fig. 9 Typical Capacitance
V
, DRAIN-SOURCE VOLTAGE (V)
DS
f = 1MHz
Ciss
Coss
Crss
0.1
1
10
100
1,000
2
4
6
8
10
12
14
16
18
20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
= 10V
I = 250mA
DS
D



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