DMN2005LPK

Document number: DS30836 Rev. 10 - 2

3 of 7

www.diodes.com

May 2015

© Diodes Incorporated

DMN2005LPK

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

10

V

Drain Current per element (Note 5)

440

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

450

mW

Thermal Resistance, Junction to Ambient

218

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

20





V

Zero Gate Voltage Drain Current





10

µA

Gate-Source Leakage





5

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.53



1.2

V

Static Drain-Source On-Resistance











0.35

0.4

0.45

0.55

0.65

1.5

1.7

1.7

3.5

3.5

Ω

Forward Transfer Admittance

40





mS

Notes:

5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.