IRF60DM206 datasheet(4/12 Pages) IRF

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IRF60DM206

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June 04, 2015

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

VGS, Gate-to-Source Voltage (V)

100

1000

TJ = 25°C

TJ = 150°C

VDS = 25V

 60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

0.5

1.0

1.5

2.0

ID = 80A

VGS = 10V

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

80 100 120 140 160 180

QG, Total Gate Charge (nC)

VDS= 48V

VDS= 30V

VDS= 12V

ID= 80A

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

 60µs PULSE WIDTH

Tj = 25°C

4.5V

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

4.5V

 60µs PULSE WIDTH

Tj = 150°C

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

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